In order to gain an efficient and more refined understanding of the architectures of next-generation computer memories, making use of emerging non-volatile memories and modeling techniques are necessary.

Abstract

Energy efficiency is given a high level of importance in the design of computer systems that are based on modern methodologies. There is a widespread idea that the amount of leakage rises exponentially with the size of the CMOS processing technology. The reason for this is because the traditional CMOS scaling theory stipulates that the threshold and supply voltages should be decreased in proportion to the size of the device. The reason for this is because modern approaches regard leaky power to be a competitor to dynamic power. In the absence of a wave of new technology that has the potential to radically alter the game, the problem of power budget leakage never be able to be entirely resolved. There have been a number of notable new advances that have taken place within the field of non-volatile memory technology. These improvements are discussed more below. Examples of popular examples of current non-volatile memories include "ReRAM," "PCRAM," and "Spin-Torque-Transfer Random Access Memory" (MRAM, STTRAM). These types of memories have desirable characteristics such as low access energy, high cell compactness, and excellent access performance. These recollections are made up of combinations of all of these characteristics. Therefore, it is wonderful that these new technologies for non-volatile memory are being used in the creation of future computers that are not only powerful but also efficient in terms of the amount of energy that they consume. Because these fresh non-volatile memory technologies are still in the research and development phase, further academic study is necessary in order to establish their applicability. This is because the aforementioned technologies are continually evolving.